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| geometry process details principal device types cmpd6001 series cmod6001 cmld6001 cmld6001do cmdd6001 gross die per 5 inch wafer 137,880 process cpd91v switching diode low leakage switching diode chip process epitaxial planar die size 11 x 11 mils die thickness 7.1 mils anode bonding pad area 3.35 x 3.35 mils top side metalization al - 15,000? back side metalization au-as - 12,000? www.centralsemi.com r2 (3-august 2010)
process cpd91v typical electrical characteristics www.centralsemi.com r2 (3-august 2010) |
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